Search results for " SSPC measurements"

showing 2 items of 2 documents

How does an In-containing underlayer prevent the propagation of defects in InGaN QW LEDs?: identification of SRH centers and modeling of trap profile

2021

Recent reports indicated that the use of an InAlN underlayer (UL) can significantly improve the efficiency of InGaN/GaN quantum well (QW) LEDs. Currently, this result is explained by considering that the UL reduces the density of nonradiative recombination centers in the QWs. However, an experimental proof of the reduction of defects in the QWs is not straightforward. In this paper, we use combined electrical (I-V), optical (L-I), capacitance (C-V), steady-state photocapacitance (SSPC) and light-assisted capacitance-voltage (LCV) measurements to explain why devices with UL have a much higher efficiency than identical LEDs without UL. Specifically, we demonstrated an improvement in both elec…

Materials scienceLEDsbusiness.industryunderlayergrowth of defectsSSPC measurementsLimitingdefects concentration; growth of defects; LEDs; SSPC measurements; underlayerSettore ING-INF/01 - Elettronicadefects concentrationCapacitancelaw.inventionTrap (computing)Experimental prooflawdefects concentration growth of defects LEDs SSPC measurements underlayerOptoelectronicsbusinessQuantum wellRecombinationLight-emitting diodeGallium Nitride Materials and Devices XVI
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Defect incorporation in In-containing layers and quantum wells: Experimental analysis via deep level profiling and optical spectroscopy

2020

Abstract Recent studies demonstrated that the performance of InGaN/GaN quantum well (QW) light emitting diodes (LEDs) can be significantly improved through the insertion of an InGaN underlayer (UL). The current working hypothesis is that the presence of the UL reduces the density of non-radiative recombination centers (NRCs) in the QW itself: during the growth of the UL, surface defects are effectively buried in the UL, without propagating towards the QW region. Despite the importance of this hypothesis, the concentration profile of defects in the quantum wells of LEDs with and without the UL was never investigated in detail. This paper uses combined capacitance-voltage and steady-state pho…

Profiling (computer programming)Materials scienceAcoustics and UltrasonicsDeep levelInGaNbusiness.industryunderlayerSSPC measurementsCondensed Matter PhysicsSettore ING-INF/01 - ElettronicaSurfaces Coatings and FilmsElectronic Optical and Magnetic Materialsdefects growthefficiencyOptoelectronicsSpectroscopybusinessdefects growth; InGaN; SSPC measurements; underlayerperformanceQuantum well
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